Abstract
An electrically controlled metaswitch is demonstrated by integrating passive metamaterial (metallic-slot array) with well-established nonvolatile flash memory technology [floating-gate (FG) structure]. In this hybrid configuration, the metamaterial acts as its control-gate layer while a monolayer graphene is the FG layer surrounded by insulators. Whose permittivity can be reconfigured with varying carrier density and correspondingly control the transmission of the passive metamaterial. In addition, this reconfiguration can be persistent due to the nonvolatile property of the FG structure (trapped charges). The gate-controllable light-matter interaction in this hybrid configuration can be greatly enhanced due to the strong resonances of the metallic-slot antenna; therefore, 78% ER is achieved by tuning the Fermi level from 0 to 0.4 eV at 0.24 THz. Furthermore, since the resonance frequency is controlled by the geometries of the metamaterial, it can be scaled from near-infrared to the terahertz regimes. The hysteretic behavior indicates new opportunities and versatility for reconfigurable metaswitch, allowing the persistent modification of their unusual electromagnetic responses by transient stimulus.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
