Abstract
We report an electrically conducting 40-pair silicon doped Al0.12Ga0.88N/GaN distributed Bragg reflector (DBR) grown by metalorganic chemical vapor deposition on a silicon doped n-type GaN template. Due to the relatively small lattice mismatch between AlGaN and GaN, strain managing layers are not required for crack-free n-DBR growth. The DBR demonstrates a peak reflectivity of 91.6% at 368nm with stopband of 11nm. In addition, the 40-pair n-DBR shows the vertical resistance of 5.5Ω, which corresponds to bulk resistivity of 0.52Ωcm, near the maximum measured current of 100mA.
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