Electrically and Optically Controllable p–n Junction Memtransistor Based on an Al2O3 Encapsulated 2D Te/ReS2 van der Waals Heterostructure (Small Methods 12/2021)

Abstract

Inside Front Cover In article number 2101303, Im and co-workers have demonstrated an electrically and optically controllable p-n junction memtransistor using an Al2O3 encapsulated 2D Te/ReS2 van der Waals heterostructure. The hybrid memtransistor shows a high switching ratio at a low operating voltage, high cycling endurance, and long retention time. It successfully functions as a multiterminal non-volatile memory, multivalued logic gate, and synaptic activities by combining electrical and optical inputs.