Electrically and Optically Bistable Operation in an Integration of a 1310nm DFB Laser and a Tunneling Diode**Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405301, and the National Natural Science Foundation of China under Grant Nos 61604144 and 61504137.

Abstract

We experimentally demonstrate an InP-based hybrid integration of a single-mode DFB laser emitting at around 1310nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.