Abstract
Electrically active defects induced by electron irradiation inCzochralski (Cz)-grown Si crystals with low carbon content(NC≤2 × 1015 cm−3) have been studied by means of Hall effect measurements, deep level transient spectroscopy(DLTS) and high-resolution Laplace DLTS (LDLTS). It has been found that in n-typecarbon-lean Cz-Si irradiated at room temperature a centre with an acceptor level atEc−0.11 eV(E0.11) is one ofthe dominant radiation-induced defects. This centre is not observed after irradiation in Cz-Si crystals withNC>1016 cm−3. TheE0.11 trap anneals out in thetemperature range 100–130 °C with the activation energy 1.35 eV.In p-type Cz-Si crystals with low carbon content and boron(NB≤2 × 1014 cm−3) oneof the dominant radiation-induced defects has been found to be a bistable centre with an energy levelat Ev+0.255 eV(H0.255). It hasbeen inferred from the analysis of temperature dependences of electron occupancy of this level that itis the E(0/++) level of a defect with negative Hubbard correlation energy (negativeU). The activation energy for hole emission from the doubly positively charged state of theH0.255 centre has been determined as 0.358 eV from LDLTS measurements.It is argued that the E0.11 and H0.255 energy levels are related to a complex incorporating an oxygen dimer and Si self-interstitial.
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