Abstract
We studied electrically active defects in CsPbBr3 polycrystalline films and single crystals samples using the thermally stimulated currents (TSC) technique in the temperature range 100–400 K. Below room temperature, both polycrystalline and single-crystals TSC emission is composed by a quasi-continuum of energy levels in the range 0.1–0.3 eV, and capture cross sections ~10−21 cm2. Above room temperature, TSC analysis reveals the presence of defect states in the range 0.40–0.52 eV only in polycrystalline samples, whereas these intermediate energy states are absent in TSC detected in single crystals. In polycrystalline films, the occupancy changes of an energy level at 0.45 eV strongly influences the room temperature photoconductivity, giving rise to slow transients due to defect passivation. In single-crystals, where intermediate energy states are absent, the photoconductivity response during illumination is almost stable and characterized by fast rise/decay times, a promising result for future applications of this material in photodetection and dosimetry.
Highlights
Lead halide perovskite CsPbBr3 is an emerging semiconductor material characterized by extremely promising optical and transport properties for next-generation optoelectronic devices: besides solar cells [1] and light-emitting diodes [2], metal halide perovskites have been taken recently under consideration as photodetectors [3] and dosimeters for medical applications [4]
A different technique, the thermally stimulated current (TSC) analysis [7], is more effective to investigate the presence of electrically active defects in the bulk material
We observe that TSC is not able to select between hole- and electron-traps
Summary
Lead halide perovskite CsPbBr3 is an emerging semiconductor material characterized by extremely promising optical and transport properties for next-generation optoelectronic devices: besides solar cells [1] and light-emitting diodes [2], metal halide perovskites have been taken recently under consideration as photodetectors [3] and dosimeters for medical applications [4]. Their potential application is limited by the poor knowledge about defects and their influence on carrier trapping and recombination effects, detrimental for the device performances [5]. Very few works on the thermally stimulated current technique applied to CsPbBr3
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