Abstract
n-type Czochralski silicon was doped or co-doped in the melt with various group IVelements (Sn, C, Pb) and has been irradiated with 1 MeV electrons to a fluence of1 × 1016 cm−2. The irradiation-induced electrically active defects have been studied by deeplevel transient spectroscopy (DLTS). It is shown that while Sn is an efficientvacancy trap, leading to the formation of SnV centres, no specific Pb-related deeplevels have been found in the upper half of the bandgap. The dominant electrontrap is the A centre, while similar concentrations of SnVs are formed in Sn- andPb+Sn-doped n-Cz material. A number of as yet unidentified deep levels with smallerconcentrations has also been observed, together with some grown-in peaks, whereof somecould be hydrogen or carbon and lead related.
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