Abstract
n-type Czochralski silicon was doped or co-doped in the melt with various group IVelements (Sn, C, Pb) and has been irradiated with 1 MeV electrons to a fluence of1 × 1016 cm−2. The irradiation-induced electrically active defects have been studied by deeplevel transient spectroscopy (DLTS). It is shown that while Sn is an efficientvacancy trap, leading to the formation of SnV centres, no specific Pb-related deeplevels have been found in the upper half of the bandgap. The dominant electrontrap is the A centre, while similar concentrations of SnVs are formed in Sn- andPb+Sn-doped n-Cz material. A number of as yet unidentified deep levels with smallerconcentrations has also been observed, together with some grown-in peaks, whereof somecould be hydrogen or carbon and lead related.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.