Abstract
Polysilicon nanofilm (PSNF) can provide a large gauge factor and good temperature stability, which promotes their application in piezoresistive sensing devices. Electrical trimming is necessary to further improve the stability and matching of piezoresistive resistors after sensor fabrication. The advantages of PSNF are realized by first preparing PSNF samples with different doping concentrations and deposition temperatures. By applying an incremental DC current that is higher than the threshold current of the PSNF resistors, the PSNF resistors are trimmed and the resistance changes are measured. The results of electrical trimming show that the threshold current, trimming rate, and trimming error are related to the doping concentration and deposition temperature. According to tunneling piezoresistive theory and the interstitial-vacancy pair model, the experimental results are expounded. These results are useful for the design and fabrication of PSNF piezoresistive sensors.
Highlights
Polysilicon is an important material in CMOS transistors and MEMS sensors
The experimental results are explained by tunneling piezoresistive theory and the interstitial-vacancy (IV) pair model [6, 7]
In the X-ray diffraction (XRD) spectrum, the peak is caused by the silicon substrate; there are no remarkable peaks attributed to other orientations
Summary
Polysilicon is an important material in CMOS transistors and MEMS sensors. The piezoresistive properties of polysilicon have been studied since the 1970s [1,2,3] and have been used in the design of piezoresistive pressure sensors.In recent years, polysilicon nanofilm (PSNF, thickness of less than 100 nm) has received increasing attention. Polysilicon is an important material in CMOS transistors and MEMS sensors. The piezoresistive properties of polysilicon have been studied since the 1970s [1,2,3] and have been used in the design of piezoresistive pressure sensors. According to our previous research, PSNF has favorable performance because it has a remarkable tunneling piezoresistive effect [4, 5]. PSNF can play an important role as a pressuresensitive material in MEMS sensors, especially in hightemperature piezoresistive sensors. PSNF samples were prepared to investigate the effects of doping concentration and deposition temperature on the electrical trimming characteristics of the samples. The electrical trimming was performed by applying an incremental DC current to the PSNF resistors. The experimental results are explained by tunneling piezoresistive theory and the interstitial-vacancy (IV) pair model [6, 7]
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