Abstract
The electrical transport properties of cosputtered tungsten silicide films were investigated. The microstructure of the annealed film was determined by x-ray diffraction. Both resistivity and Hall coefficients for the WSi2 films were measured in the temperature range 80–300 K. The current carriers in tungsten disilicide were found to be positive holes. The carrier concentration determined from this experiment is ∼1×1022 cm−3 which does not change with either annealing process or measuring temperature. The resistivity of the WSi2 film in the measured temperature range increases approximately linearly with temperature. The carrier mobility and its temperature dependence were also studied.
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