Abstract
Polycrystalline samples of SnBi4Te7 and PbBi4Te7 withdeviations from stoichiometry in different sublattices were synthesized bymelting and quenching followed by prolonged annealing and hot-pressing. Atroom temperature SnBi4Te7 exhibits both n-type conductivity (Tedeficiency and Sn or Bi excess) and p-type conductivity (Te excess and Sn orBi deficiency) whereas only n-type conductivity samples were obtained forPbBi4Te7 regardless of the type of deviation from stoichiometry. Bothcompounds possess high carrier concentrations in the range4×1019-4×1020 cm-3 and a relatively low carriermobility of 35-70 cm2 V-1 s-1. The electrical resistivity andSeebeck coefficient have been measured over the temperature range 100-800 Kon samples with different deviations from stoichiometry. The temperaturedependence of the electrical transport properties of the compounds is typicalof heavily-doped semiconductors. The potential for thermoelectric applicationsusing these compounds is discussed.
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