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Abstract
A method is introduced to isolate and measure the electrical transport properties of individual single-walled carbon nanotubes (SWNTs) aligned on an ST-cut quartz, from room temperature down to 2 K. The diameter and chirality of the measured SWNTs are accurately defined from Raman spectroscopy and atomic force microscopy (AFM). A significant up-shift in the G-band of the resonance Raman spectra of the SWNTs is observed, which increases with increasing SWNTs diameter, and indicates a strong interaction with the quartz substrate. A semiconducting SWNT, with diameter 0.84 nm, shows Tomonaga-Luttinger liquid and Coulomb blockade behaviors at low temperatures. Another semiconducting SWNT, with a thinner diameter of 0.68 nm, exhibits a transition from the semiconducting state to an insulating state at low temperatures. These results elucidate some of the electrical properties of SWNTs in this unique configuration and help pave the way towards prospective device applications.
Highlights
IntroductionIntroduction to Solid State PhysicsNew York: Wiley; 2004. 40. Wong HSP, Akinwande D: Carbon Nanotube and Graphene Device Physics.Cambridge: Cambridge University Press; 2011. 41
Introduction to Solid State PhysicsNew York: Wiley; 2004. 40
It has been reported that arrays of long and horizontally highly aligned SWNTs could be synthesized on some single crystal substrates, such as ST-cut quartz [8] and sapphire [9]
Summary
Introduction to Solid State PhysicsNew York: Wiley; 2004. 40. Wong HSP, Akinwande D: Carbon Nanotube and Graphene Device Physics.Cambridge: Cambridge University Press; 2011. 41. Single-walled carbon nanotubes (SWNTs), with their miniature size, low structural defects, and various other superior properties [1,2,3,4], are very attractive nanomaterials as basis for future electronic devices [5,6,7]. It has been reported that arrays of long (hundreds of microns) and horizontally highly aligned SWNTs could be synthesized on some single crystal substrates, such as ST-cut quartz [8] and sapphire [9]. We present a method for the fabrication of electrical terminals on individual SWNTs aligned on an ST-quartz substrate and the measurement of their electrical transport properties from room temperature down to 2 K. The results are compared with theory and discussed in connection with the strong interaction with the substrate
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