Abstract
The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique. Hall effect measurements revealed that Si doped hBN epilayers exhibit n-type conduction at high temperatures (T > 800 K) with an in-plane resistivity of ∼12 Ω·cm, electron mobility of μ ∼ 48 cm2/V·s and concentration of n ∼ 1 × 1016 cm−3. Temperature dependent resistivity results yielded a Si energy level in hBN of about 1.2 eV, which is consistent with a previously calculated value for Si substitutionally incorporated into the B sites in hBN. The results therefore indicate that Si is not a suitable dopant for hBN for room temperature device applications.
Highlights
Hexagonal boron nitride possesses excellent physical properties such as high thermal conductivity, chemical stability, negative electron affinity, large energy band gap (Eg ∼ 6.4 eV), and large neutron capture cross section[1,2,3,4] and has been the subject of interest recently due to its potential for various applications
Secondary ion mass spectrometry results revealed that hexagonal boron nitride (hBN) epilayers have excellent stoichiometry.[8]. These properties signify that the quality of our metal organic chemical vapor deposition (MOCVD) grown hBN epilayers represents a dramatic improvement over those of previously reported hBN films having X-ray diffraction (XRD) rocking curve full width at half maximum (FWHM) of 1.5 ◦–0.7 ◦
Si doped hBN epilayers have been grown via in-situ Si doping by MOCVD technique
Summary
Hexagonal boron nitride (hBN) possesses excellent physical properties such as high thermal conductivity, chemical stability, negative electron affinity, large energy band gap (Eg ∼ 6.4 eV), and large neutron capture cross section[1,2,3,4] and has been the subject of interest recently due to its potential for various applications. The layered and hexagonal structure is closely lattice matched to graphene making it highly suitable for the construction of hBN/graphene based two-dimensional (2D) heterostructures.[5,6,7] Lasing action in deep ultraviolet (DUV) region (∼225 nm) by electron beam excitation was demonstrated in small hBN bulk crystals synthesized by a high pressure/temperature (HPHT) technique.[4] This coupled with recent advances in wafer-scale epitaxial growth and the demonstration of extraordinarily efficient band-edge emission brings out its promise as an active DUV photonic material.[8,9,10,11] we have shown that it is possible to convert this ultra-wide bandgap material to p-type by Mg doping and a p-type resistivity that is about 6 orders of magnitude lower than Mg doped wurtzite AlN has been measured.[8] This possibility of p-type conductivity control in hBN epilayers represents an exceptional opportunity to revolutionize p-layer approach and overcome the intrinsic problem of low p-type conductivity in Al-rich AlGaN alloys for DUV device applications.[11].
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