Electrical Transport Properties of Self-Organized ZrO2 Nanotube

Abstract

Self-organized ZrO2 nanotubes are prepared via the conventional anodization method. Back-gate field effect transistors are fabricated for the first time to study the electrical transport properties of single ZrO2 nanotube The drain current increases with the applied negative gate voltage, which is suggesting the ZrO2 nanotube works under hole accumulation mode. The room temperature hole mobility of 0.03 cm2 V-1s−1 and average hole concentration of 2.8 × 1018 cm−3 are obtained at low drain bias. Temperature dependent I-V characteristics show that the hole concentration and hole mobility have an opposite changing trend with the temperature. The current of the device is controlled by the offset effect between the hole concentration and hole mobility.