Abstract
Nickel disilicide layers were synthesized by nickel ion implantation into silicon substrates using a metal vapor vacuum arc (MEVVA) ion source. The implantation was performed at an extraction voltage of 65 kV, with nominal ion doses ranging from 4/spl times/10/sup 17/ cm/sup -2/ to 8/spl times/10/sup 17/ cm/sup -2/ at various beam current densities ranging from 13 /spl mu/A/cm/sup 2/ to 52 /spl mu/A/cm/sup 2/. Characterization of the as-implanted and annealed samples was performed using Rutherford backscattering spectrometry, x-ray diffraction, electrical resistivity and Hall effect measurements. The temperature dependence of the sheet resistivity and the Hall mobility from 30 to 400 K showed peculiar peak and valley features varying from sample to sample. A two-band model was proposed to explain the observed electrical transport properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
