Abstract
CdS is one of the important II-VI group semiconductors. In this paper, the electrical transport behavior of an individual CdS microrope composed of twisted nanowires is studied. It is found that the current–voltage (I-V) characteristics show two distinct power law regions from 360 down to 60 K. Space-charge-limited current (SCLC) theory is used to explain these temperature- and electric-field-dependent I-V curves. The I-V data can be well fitted by this theory above 100 K, and the corresponding carrier mobility, trap energy, and trap concentration are also obtained. However, the I-V data exhibit some features of the Coulomb blockade effect below 80 K.
Highlights
IntroductionOne-dimensional (1D) semiconductor nanostructures (nanotubes, nanorods, nanowires, nanobelts, etc.) have gained tremendous attention within the last two decades due to their unique electronic, optical, and mechanical properties
One-dimensional (1D) semiconductor nanostructures have gained tremendous attention within the last two decades due to their unique electronic, optical, and mechanical properties
The current increases gradually at higher voltages. This phenomenon is qualitatively consistent with the Coulomb electron–electron interaction should be taken into account in the Space-charge-limited current (SCLC) theory especially at lower temperatures
Summary
One-dimensional (1D) semiconductor nanostructures (nanotubes, nanorods, nanowires, nanobelts, etc.) have gained tremendous attention within the last two decades due to their unique electronic, optical, and mechanical properties. Among the huge variety of 1D nanostructures, CdE (E = S, Se, and Te) 1D nanostructures have attracted much attention for their potential applications in solar cells [1], biosensors [2], electrochemical detection [3], and photocathodes [4]. In order to fulfill these potential applications, it is very essential to properly identify some physical characteristics which play important roles on electrical transport characteristics such as conductivity, I-V characteristic, and carrier mobility. The extractions of material parameters (i.e., carrier mobility and trap energy) rely on analysis with specific models. Analysis of the voltage and temperature dependencies of the SCLC theory in n-type CdS nanowire showed that the nanowire surface traps were exponentially distributed in energy with a characteristic depth about 0.28 ± 0.04 eV, showing that the surface traps were an essential ingredient for proper understanding of SCLC in nanowires [19]
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