Abstract
The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix is fabricated. The discontinuous staircases on its I-V curves are observed. There are two distinct regimes on I-V curves of diode: (1) the sequential tunneling regime, where current increases monotonously with increased negative bias; (2) the resonant tunneling regime, where the current increases dramatically with increased negative bias and three quantum staircases appear. The qualitative explanation of this physical phenomenon is proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
