Abstract
The effect of an internal piezoelectric field on electrical transport phenomena has been studied in GaAlAs/GaInAs heterostructures grown on (001) and (111)B GaAs substrates. The two-dimensional electron gas (2DEG) in the structure was obtained by conventional modulation δ-doping in the barrier layer. The conductivity and Hall effect were studied at room temperature as a function of hydrostatic pressures up lo 1000 MPa. The observed pressure changes of the 2DEG concentration have been compared with theoretical predictions, taking into account the strain-induced electric fields in the harrier layer. The piezoresistive behaviour under uniaxial stress has also been determined. It was found that piezo-effects are more pronounced in the case of the material with the built-in piezoelectric field.
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