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Abstract
Quantum Hall Effect (QHE) and field effect mobility (in zero magnetic field) were measured in commercial low mobility n-channel MOSFETs. All the samples, at least in the region of higher mobility, show the quantized values of the Hall resistance. However we have identified a strong effect of the "aging" of the samples: a "new" sample shows the usual QHE curves and smooth field effect mobility curves, while an "aged" sample shows pronounced peaked structures superimposed on the normal field effect mobility. The QHE curves also show an anomalous behaviour superimposed on the usual one, We attribute the deformation of the QHE curves to an onset of a thermoelectromotive force related to electric fields which produce non-uniform electron energy distribution along the channel. We give evidence of thermoelectric effects by measurements on a high quality Hall geometry MOSFET. Our experiments indicated an approximately linear dependence of the thermoelectric voltage on the electric field along the sample.
Published Version
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