Abstract
We report on the electrical transport properties of intentionally undoped, laser-crystallized polycrystalline silicon-germanium thin-films. The electrical transport in this material strongly depends on the alloy composition and the crystallization procedure. At low temperatures the undoped germanium-rich samples show an unexpected high p-type conductivity with a weak temperature dependence. Posthydrogenation results in a pronounced decrease in the conductivity and a change in the dominating low temperature transport behavior. The results are discussed in terms of a grain-boundary dominated transport model.
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