Abstract
The work in this paper, presents the analysis of electrical transport in graphene nanoribbon (GNR) interconnect as next generation on-chip interconnect. Graphene has the potential of performing as an interconnect material that could replace the existing copper interconnects in future silicon based micro chip. In this work, we have investigated how the mean free path (MFP) of electron in graphene can be changed by increasing the carrier concentration due to acoustic phonons, optical absorption, and optical emission scattering. We have also investigated the intrinsic mobility of electron in graphene contributed due to acoustic, optical and surface plasmon polarization (SPP) phonon scattering parameters.
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