Electrical transport in crystalline perylene derivatives films for electronic devices

Abstract

This paper presents investigations on the electrical transport phenomena in perylene and PTCDA emphasising the particularities of the charge carrier injection at the contacts with inorganic semiconductors (Si) and metals (Cu, Al) and the effect of the supplementary organic layer (ZnPc, α-NPD) on the electrical conduction. The I–V characteristics for different delay and integration times, at forward and reverse bias, have evidenced a dominant ohmic behaviour of these SIS and MIS structures at low voltage (<0.1 V) and limitations of the current induced by the space charge and trap charge at voltages >1 V. An intermediate organic layer (ZnPc) with higher ionisation potential than PTCDA and lower electron affinity than perylene improves the charge carrier injection and the conduction properties of the Si/PTCDA/Si and forward biased Cu/perylene/Si heterostructures. No increase in the hole injection was obtained in Si(p)/perylene/Si(p) heterostructure introducing an α-NPD layer.