Abstract
Amorphous Se1−xSbx (x=0.1, 0.15 and 0.2) films of different thicknesses were prepared by the electron gun evaporation technique. Their structure was studied using reflection or transmission electron diffraction patterns. The d.c. electrical conductivity, thermoelectric power and magnetoresistance measurements, were made in the temperature range 80–300 K. These measurements confirm intrinsic conduction in the entire range of investigation, and were found to be independent of the film thickness. The effect of antimony impurity on electrical transport properties of selenium is understood in terms of the reduction of the Se8 ring population.
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