Abstract
Electrical transport properties of zone-melt-recrystallized Si films of Si-on-Insulator wafers were investigated using resistivity and Hall effect measurements between 77 and 300 K. Both graphite strip and cold cathode electron beam methods were used for zone melting which produced high resistivity (≳103 Ω cm at room temperature) recrystallized films. Phosphorus implantation into the silicon films to a dopant level of 1×1016 cm−3 and subsequent annealing at 1100 °C reduced the room-temperature resistivities to ∼1 Ω cm. Hall mobilities of 950 cm2/V s were observed at room temperature for both materials after the implant anneal sequence. However, for temperatures less than 150 K, the mobility is higher in graphite strip than in electron beam recrystallized films. This behavior is consistent with the relative crystalline qualities of the two films as determined by electron channeling and x-ray diffraction. It is noteworthy that a deep level was observed at 0.2 eV below the conduction band in the graphite strip recrystallized film but not in the electron beam recrystallized samples.
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