Abstract
(As2Se3)1 –x(CdSe)x (x = 0.01, 0.03, 0.05) glass alloys have been prepared in the temperature range 500–700°C using As2Se3 and CdSe as master alloys. The electrical transport and photoelectric properties of the alloys containing 1, 3, and 5 mol % CdSe have been studied. The temperature dependences of electrical conductivity for the glass alloys demonstrate that they are high-resistivity p-type semiconductors. The results on the photoelectric properties of the alloys indicate that the materials are photosensitive in the wavelength range 0.75–0.82 μm and that their optical band gap varies from 1.51 to 1.65 eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.