Abstract

We demonstrate that predepositing a nanometrically thin nickel film on a dielectric surface is sufficient to transform an amorphous pyrolyzed photoresist film (PPF) into a graphitic film (GRF) enriched with nickel particles. The GRF shows 3 orders of magnitude higher carrier mobility than the amorphous PPF, whereas its electrical conductivity doubles after etching away the nickel remains. The pronounced 2D peak in the Raman spectrum, almost dispersionless absorbance in the spectral range of 750-2000 nm, and the saturable absorption coefficient indicate that GRF possesses a graphene-like band structure. The proposed cost-efficient and scalable synthesis route opens avenues toward fabrication of micron size patterned graphitic structures of any shape directly on a dielectric substrate. Having graphene-like transport and electrical properties at 20 times higher absorbance than the single-layer graphene, GRF is attractive for fabrication of fast modulators for optical radiation, bolometers, and other photonics and optoelectronic devices that require enhanced optical absorption.

Highlights

  • The dispersionless absorption coefficient of graphene in the VIS-NIR spectral range[1, 2] makes this 2D material attractive for a number of optoelectronic applications

  • There exist several techniques that enable the enhancement of the graphene absorption whilst preserving high carriers mobility and mean free path, e.g. by organizing graphene nanosheets into vertically oriented array made by plasma-enhanced chemical vapor deposition, by modifying the substrate[5] or patterning the graphene[6]

  • We demonstrate that by pre-depositing 10 nm thick layer of Ni catalyst on the silica substrate one can transform amorphous pyrolyzed photoresist film (PPF) into graphitic film (GRF) embedded with Ni nanoparticles, which can be readily etched away after the synthesis

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Summary

Introduction

The dispersionless absorption coefficient of graphene in the VIS-NIR spectral range[1, 2] makes this 2D material attractive for a number of optoelectronic applications. The direct growth of continuous graphene on the insulating support has been demonstrated on the molten glass that enables a highly uniform graphene nucleation[12] Another approach suggests using a dielectric substrate with a pre-deposited few hundred nanometers thick sacrificial copper layer[13,14,15]. We demonstrate that by pre-depositing 10 nm thick layer of Ni catalyst on the silica substrate one can transform amorphous pyrolyzed photoresist film (PPF) into GRF embedded with Ni nanoparticles, which can be readily etched away after the synthesis Such a drastic impact of the Ni film on the pyrolysis of the photoresist opens avenues towards new approach for the synthesis of graphitic films and their application in photonic and optoelectronic devices. We propose an appealing route to produce micron size graphitic structures that can be utilized for scalable fabrication of graphitic circuits on a dielectric substrate

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