Abstract
In this paper, we describe magnetoelectric properties of metal/metal-oxide/metal junctions based on anodized metal oxides. Specifically, we use Ti and Fe metallic layers separated by the porous metal-oxides of iron or titanium formed by the anodization method. Thus, we prepare double junctions with at least one ferromagnetic layer and measure magnetoresistance, as well as their current-voltage and magnetic characteristics. We find that magnetoresistance depends on that junction composition and discuss the nature of differential resistance calculated from I-V characteristics. Our findings show that a top metallic layer and the interface between this layer and anodized oxide, where strong interatomic diffusion is expected, have the strongest influence on this observed behavior.
Highlights
There has been a growing interest in recent years in the magnetic and electrical properties of metal oxides [1,2], for example, magnetic semiconductors, dilute semiconductors [3,4], and not-dilute semiconductors [5], and the magnetic half-metals, such as magnetite [6]
The main focus of our study is the junctions composed of the titanium- and iron-based metal oxides, which are widely considered for electronics and spintronics [7,8] because the semiconducting metal oxide/metal heterostructures can form a junction with the Schottky barrier [9]
We showed that the electrochemical anodization process can be used as an easy way for oxidation of metallic layers and formation of magnetic metal/porous oxide junctions
Summary
There has been a growing interest in recent years in the magnetic and electrical properties of metal oxides [1,2], for example, magnetic semiconductors, dilute semiconductors (e.g., doped titanium oxides) [3,4], and not-dilute semiconductors (e.g., hematite) [5], and the magnetic half-metals, such as magnetite [6]. The main focus of our study is the junctions composed of the titanium- and iron-based metal oxides, which are widely considered for electronics and spintronics [7,8] because the semiconducting metal oxide/metal heterostructures can form a junction with the Schottky barrier [9]. The nanotubular anodized titanium oxide was shown to form a Schottky barrier between Ti and TiO2 and the importance of structural defects on semiconducting properties was further investigated recently [16,17]
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