Abstract
BixSb2−xTe3 films were electrodeposited potentiostatically from acidic nitric baths at room temperature by controlling the electrodeposition parameters (i.e., the applied potential). Nearly stoichiometric BixSb2−xTe3 thin films were obtained at applied potentials between −0.10 and −0.15 V versus the saturated calomel electrode (SCE). The electrical and thermoelectric properties of the as-deposited films were degraded at more negative deposition potentials; this might be attributed to the greater defect density formed. The post-annealing process in the reducing environment improved the electrical and thermoelectric properties, possibly because of a decrease in antistructure defects.
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