Abstract
PbZrO3 and mixed PbZr1-xSnxO3 single crys- tals were grown by means of high temperature solution growth technique. A spontaneous crystallization was car- ried out in a Pt crucible, with PbO as a solvent. Electrical as well as thermal and dielectric properties were investi- gated in terms of Sn concentration. The measurements have been made in the large temperature range between 120 K and 800 K. The temperature dependences of cp for inves- tigated crystals can be approximated by the Einstein function and at high temperatures (cubic phase) cp reaches the classical Dulong-Petit limit value *125 J/mol K. From electrical measurements the ac and dc conductivity and the activation energies have been calculated and attributed to different types of electrical conductivity.
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