Abstract

Electrical switching in bulk Ge20Te80−xInx(x = 0,6,10,14 & 16) glasses has been investigated. The glasses studied are found to exhibit current controlled negative‐resistance behaviour and memory switching. Further, the switching voltage (Vt) is found to increase linearly with sample thickness in the range of 0.2mm to 0.45mm. It is observed that the variation of switching voltage (Vt) of Ge‐Te‐In glasses show a maximum value at an average coordination number 〈r〉 = 2.52 (at x = 6, onset of rigidity percolation), there after decreases and a minimum is seen in the switching voltage at an average coordination number 〈r〉 = 2.68 (at x = 14), which is likely to be the chemical threshold of the system. Beyond x = 14, switching voltage is found to increase again with composition.

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