Abstract
The ferroelectric switching properties of thin films of lithium niobate (LiNbO3) on silicon have been investigated. The polarization is shown to be partially reversible with an applied electric field at room temperature. The samples were films of LiNbO3 which were magnetron sputter deposited on silicon substrates. A double pulse method was used to investigate the ferroelectric switching properties of the films. Evidence for partial stable switching of the LiNbO3 film was observed at a field of roughly 500 kV/cm.
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