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Abstract
Bulk AgI-Ag2O-MoO3 (50:25:25) glasses have been prepared by melt quenching method (Microwave heating and quenched between two heavy steel plates). The electrical switching experiments have been carried out using a Keithley Source Meter (model 2410) controlled by Lab VIEW 6i, on samples of thicknesses 0.1, 0.2 and 0.3 mm at different ON state currents (3 mA, 2 mA, 1 mA, 0.6 mA, 0.4 mA and 0.25 mA). The samples are found to exhibit fast memory switching. The power dissipation increases with both thickness and ON state current. The threshold voltage, VTH increases with thickness; and for a given thickness, the VTH decreases with increasing ON state current. A sample of thickness 0.1 mm exhibits near ideal memory switching with the least power dissipation for an ON state current of 0.25 mA. The samples studied can be used for fast switching applications with minimum power dissipation.
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