Abstract
Switching and Memory Device: Materials and Fabrication This paper is a report on stable and reproducible current-controlled bistable electrical switching and memory phenomena observed in polycrystalline metal-organic semiconducting films. The effects are observed in films of either copper or silver complexed with the electron acceptors tetracyanoethylene (TCNE), tetracyanonapthoquinodimethane (TNAP), tetracyanoquinodimethane (TCNQ), (1) or other TCNQ derivatives shown below. The character of the switching in going from a high- to a low-impedance state in these organic charge-transfer complexes is believed to be comparable in many respects to existing inorganic materials. The basic configuration of the device, shown in Figure 1, consists of a 5-10 µm thick polycrystalline aggregate of a copper or a silver charge-transfer complex sandwiched between two metal electrodes. Electrical connection is made to the two metal electrodes through silver conducting paste or through liquid metals of mercury gallium or gallium-indium eutectic. Fabrication of the device consists of first
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