Abstract
Columnar microfibrous thin films (μFTFs) of Parylene C are deposited on top of p-type Si substrate using physicochemical vapor deposition to form metal-insulator-semiconductor and metal-insulator-metal structures utilizing the Parylene-C μFTFs as the gate dielectric. The columnar μFTFs were characterized for their electrical properties and dielectric integrity using leakage-current and capacitance measurements at temperatures in the 200K - 500 K range and at frequencies in the range 1 kHz to 1 MHz. Observed variations in leakage current and capacitance were found to be consistent with transport mechanisms involving the Poole–Frenkel and Schottky emission mechanisms as well as carrier trapping/detrapping at interfacial traps.
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