Abstract
The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec−1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
Highlights
IntroductionZnO, SnO2 , In2 O5 , and InGaZnO5 , which have many applications in electronics, sensors, and active matrix displays
In recent years, intensive research efforts have focused on metal oxide semiconductors, such asZnO, SnO2, In2 O5, and InGaZnO5, which have many applications in electronics, sensors, and active matrix displays
We fabricated SnO -based thin-film transistors (TFTs) doped with different levels of Al via RF reactive co-sputtering
Summary
ZnO, SnO2 , In2 O5 , and InGaZnO5 , which have many applications in electronics, sensors, and active matrix displays Because of their high electron mobility and good transparency, metal oxide semiconductors are especially ideal candidates for the active layers of thin-film transistors (TFTs) [1,2,3,4,5,6,7]. Compared to amorphous silicon, metal oxide semiconductors can be fabricated at a relatively low temperature (≤300 ◦ C), even room temperature, and have higher electron mobility than amorphous silicon, finding many applications in the manufacture of organic light-emitting diode display panels. If a doped component could maintain the oxygen content in the metal oxide semiconductors, the device stability and controllability would improve [8]
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