Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs)

F.V Farmakis,J Brinis,C.A Dimitriadis,G Kamarinos,V.K Gueorguiev,Tz.E Ivanov

doi:10.1109/smicnd.1999.810452

Electrical stress in N- and P-channel undoped-hydrogenated polysilicon thin film transistors (TFTs)

F.V Farmakis, J Brinis + Show 4 more

https://doi.org/10.1109/smicnd.1999.810452

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Publication Date: Oct 5, 1999

Citations: 4

Affiliation: Aristotle University of Thessaloniki, École Nationale Supérieure d'Architecture de Grenoble, Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences

#N-channel Polysilicon Thin Film Transistors #Polysilicon Thin Film Transistors + Show 8 more

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Abstract

We applied electrical stress in P- and N-channel polysilicon thin film transistors. N-channel devices exhibit two-step degradation with hot-hole injection into the gate oxide followed by electron injection. Stress in P-channel devices provides interesting results in order to clarify the physical mechanisms occurring during device aging.

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