Abstract
We extend the technique of photoconductance and photocapacitance characterization of semiconductors to excitation energies above the band gap. Intrinsic illumination was found to cause highly efficient recovery of EL2 in semi-insulating GaAs from the metastable state at 4 K and to quench extrinsic photoconductance. The results indicate that this optical recovery is a recombination-enhanced defect reaction, triggered by hot-electron capture into a resonant acceptor level of the metastable state of EL2 with a capture barrier of 0.07 eV.
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