Abstract
We have modelled a p–i–n image sensor under local illumination through a two-dimensional non-linear circuit. The sensor is described as an array of photodiodes interconnected through lateral resistors, which model the sheet resistance of the doped layers. Under small-signal analysis, each photodiode is modelled by a current-controlled resistor proportional to the inverse of the photocurrent. A SPICE based simulator is used to analyse the sensor output characteristics. Several configurations and contact geometries are analysed for the image transducer. The image responsivity, the spatial resolution and the image distortion are modelled by changing the ratio between the transversal and the lateral resistors or the acquisition points. Results show that the geometry and location of the contacts affect the distortion of the restored image. The conductivity of the doped layers and the light flux illumination influences the image resolution and accuracy. The simulated and experimental results were found in a good agreement.
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