Abstract
Cd0.9Zn0.1Te (CZT) single crystals were grown by traveling heater method using Te asa solvent. The structural quality of the grown single crystals ischaracterized by X-ray diffraction, atomic force microscopy and Raman spectroscopy. The X-ray rocking curve analysis confirms the good crystalline perfection of the CZT wafers. Raman spectroscopy reveals the two-mode behavior of CZT crystals having CdTe- and ZnTe- like structures with transverse and longitudinal optical frequencies at 141.5, 159.6, and 175.3 cm−1.I-V characteristics of the CZT wafers areperformedunder different surface preparation conditions. Highest resistivity of about 1.36 x 1011Ω.cm is obtainedfor the CZT wafer using gold electrodes with post-deposition thermal annealing.
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