Abstract
The electrical resistivity of GdS, GdSe, GdTe, LaS, LaSe and LaTe single crystals has been measured between 4.2 K and 300 K for various stoichiometries. The diamagnetic La chalcogenides show normal metallic resistivities with d ϱ/d T being positive for metal excess or deficiency. The antiferromagnetic Gd chalcogenides exhibit a peak in the resistivity at T N when being stoichiometric. Sufficient anion deficiency results in d ϱ/d T being positive over the whole investigated temperature interval and sufficient metal deficiency leads to a steady increase of the resistivity below T N. For this anomalous behavior a model based on the exchange interaction between conduction electrons and a defect induced ferromagnetic cluster is proposed.
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