Abstract
The electrical resistivity due to various arrays of parallel (single-slip) edge dislocations is investigated using the simple model of a long-range strain field interacting via a deformation potential with a uniform electron gas. Despite the large separation between dislocation---as compared with the relevant electron wavelengths---the coherent-scattering effects can, in special cases, make a significant contribution to the result. This contribution is anisotropic (although the simple three-to-one ratio in resistivities due to incoherent scattering no longer holds) and exhibits a marked size effect.
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