Abstract
The work is focused on the measurements of electrical resistivity of CrN thin lms deposited on glass substrates by DC-magnetron sputtering in Ar+N2 atmosphere. The studied samples reveal semiconducting behaviour of electrical resistivity in the whole range of tested preparation parameters (such as pressure and composition of ArN2 mixture), whereas the electrical transport regime is strongly in uenced by parameters of preparation. Numerical analysis of the experimental data showed that electrical transport can be adequately described in terms of variablerange hopping conduction in selected temperature intervals. Moreover, S-shaped anomaly in ρ(T ) dependence, being expected to be a consequence of phase transition to a low-temperature antiferromagnetic orthorhombic phase, has been observed for sample with the highest concentration of N2 in the temperature interval of 220 250 K. The obtained results indicate that technology processes typically used for preparation of CrN coatings represent a promising potential to develop also high sensitivity cryogenic sensors for high magnetic elds applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
