Abstract
Electrical resistivity of vapor-quenched itinerant-electron ferromagnetic amorphous Hf 1− x Ta x Fe 2 alloys for 0 ≦ x ≦ 1 has been measured from 4.2 to 300 K. The temperature coefficient of the resistivity ( TCR) systematically increases with increasing Ta concentration x above the Curie temperature T C. Below T C the TCR clearly becomes negative for all the alloys. The amount increased below T C in the resistivity is proportional to the square of the spontaneous magnetization at 0 K. These results suggest that the main part of the temperature dependence is due to magnetic scattering of the conduction electron.
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