Abstract
The electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cmâ3. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach at similar temperatures and doping concentrations. The critical impurity concentration for the metalânonmetal transition was found to be about 1018 cmâ3.
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