Abstract
We have performed an investigation of the magnetic properties of the new compounds Ho 2(Ru,Os)Ge 2, which crystallize in the monoclinic structure-type Sc 2CoSi 2 (space-group B2/m), using an AC susceptometer. Both compounds undergo possibly antiferromagnetic transitions at T N≈40 K; subsequent spin-reorientations towards a ferromagnetic spin alignment occur at temperatures below 20 K. From isothermal ( T=5 K) magnetization measurements versus external field ( μ 0 H=0–3 T) an ordered moment of 5.2 μ B has been derived for both samples. In the paramagnetic region effective moments close to the ideal free Ho 3+ ion moment ( μ eff=10.6 μ B) were deduced, the θ p values being positive. The temperature dependence of the electrical resistivity reveals pronounced changes of slope at the ordering temperatures T N and T C. The maxima of d ρ/d T versus T are in agreement with magnetic data above. For the paramagnetic region a deflection of the generally linear ρ– T plot of nonmagnetic metallic systems is observed, which could be attributed to the influence of the crystalline field split levels of the seventeenfold degenerate Ho 3+ ground-state 5I 8. Not knowing the exact 4-f level scheme, we use a single spacing ( δ) crystal-field model for an order of magnitude estimate. The results of the negative magnetoresistivity data are due to the reduced spin disorder scattering in the ordered state.
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