Abstract
The pulsed jet technique was applied to measure the electrical resistance response of a Zn-terminated ZnO(0001) substrate to trace ethanol in the air to simulate the realistic working surface of a semiconductor gas sensor in a vacuum. The resistance response to the trace ethanol under the static atmospheric pressure air was well reproduced by the periodic pulsed jet technique with the optimal irradiation conditions, in which the pressure in the vicinity of the surface transiently reached 2 kPa. The behavior of the resistance upon the pulsed jet irradiation was discussed in terms of the ionosorption of oxygen. Because the background pressure was kept low enough during the pulsed jet irradiation, the reaction products during the ethanol sensing, such as acetaldehyde, has been successfully detected at the elevated temperature above 400 K by temperature programmed desorption-mass spectrometry (TPD-MS).
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