Abstract
The influence of several features upon the electrical resistance of gas-sensitive copper phthalocyanine (CuPc) thin films has been investigated. The main factors studied concern the substrate nature (Al 2O 3 or Si/SiO 2), electrode layout, film thickness and deposition rate. Subsequent annealing round 200°C may induce more or less deep structural changes subject to the type of substrate. Molecular deterioration may also occur by way of electrochemical processes under some conditions. The effect of humidity on the electricla resistance also appears to be substrate dependent.
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