Abstract
The InP-based wafers with InGaAsP multiple Quantum Wells (QWs) were designed for the loss compensation of surface plasmon polaritons (SPPs). Electrical-pumped device was fabricated by conventional III-V processes and e-Beam lithography (EBL) technology. When forward voltage is added on the device, it is observed that the gain of the quantum wells at 1.55μm assist the propagation of SPPs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
