Abstract
Since the 3D-Open-Shell-Electrode Detector (3DOSED) is proposed and the structure is optimized, it is important to study 3DOSED’s electrical properties to determine the detector’s working performance, especially in the heavy radiation environments, like the Large Hadron Collider (LHC) and it’s upgrade, the High Luminosity (HL-LHC) at CERN. In this work, full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Simulated detector properties include the electric field distribution, the electric potential distribution, current-voltage (I-V) characteristics, capacitance-voltage (C-V) characteristics, charge collection property, and full depletion voltage. Through the analysis of calculations and simulation results, we find that the 3DOSED’s electric field and potential distributions are very uniform, even in the tiny region near the shell openings with little perturbations. The novel detector fits the designing purpose of collecting charges generated by particle/light in a good fashion with a well defined funnel shape of electric potential distribution that makes these charges drifting towards the center collection electrode. Furthermore, by analyzing the I-V, C-V, charge collection property and full depletion voltage, we can expect that the novel detector will perform well, even in the heavy radiation environments.
Highlights
In extremely harsh radiation environments, such as the Large Hadron Collider (LHC) and its upgrade, namely the HL-LHC, the total radiation fluence can reach up to 1 × 1016 neq/cm2.1 Under heavy radiation, radiation induced defects in Si will cause increases in detector leakage current and full depletion voltage, which in turn will degrade detector performance.[2]
For high energy physics applications with radiation hardness consideration, we mainly focus on the 3D-Open-Shell-Electrode Detector (3DOSED) with p-type bulk silicon
Through analyzing results of charge collection simulations, we find that the charge collection of the 3DOSED under heavy radiation is nearly not influenced by the opening gap of the shell electrode
Summary
In extremely harsh radiation environments, such as the Large Hadron Collider (LHC) and its upgrade, namely the HL-LHC, the total radiation fluence can reach up to 1 × 1016 neq/cm2.1 Under heavy radiation, radiation induced defects in Si will cause increases in detector leakage current and full depletion voltage, which in turn will degrade detector performance.[2]. It is the schematic diagram and it presents the incident particle and the path of the induced electrons in the detector. The bulk silicon is p-type Si with a doping density of 1 × 1014 cm-3 to simulate the space charge induced by radiation effect at a radiation fluence of 1 × 1016 neq/cm2.17 The p+ doped square shape central column electrode has aside length of 10 μm and a depth of 150 μm. Formed by two complementary n+ doped silicon trenches, with a width of 10 μm and a depth of 150 μm After etching of those electrodes, the detector main body in a unit cell will be connected to the bulk of Si wafer through the openings in the shell electrodes. We use an effective doping concentration of 1014 cm-3 to account for the space charge increase to the absolute value of a negative space charge of 1014 cm-3 after a radiation of 1016 neq/cm[2]
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