Abstract
The electrical conduction properties of a heterostructure based on a stacked double-layer porous silicon structure have been investigated. Two layers of porous silicon (PS) with different porosities were inserted in an Au/PS/p:Si/Al structure. Transport properties of this structure have been investigated by current–voltage ( I– V) and admittance spectroscopy measurements. From I– V characteristics and the band diagram of the structure, it was concluded that tunneling current is prevailing at low forward polarization. The temperature dependence of the conductance shows the existence of a hopping conduction in the PS layer.
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