Abstract
Electrical properties, structure, and phase morphology of gold‐gallium alloy films codeposited on {100} substrates of gallium arsenide have been investigated by measurement of Schottky barrier height φ and breakdown voltage as a function of film composition and annealing conditions and comparison with corresponding structure and phase morphology, as determined by x‐ray diffraction and transmission electron microscopy. Both φ and decrease with increasing composition of gallium in the codeposited films and with increasing severity of annealing conditions. These decreases are attributed to formation of gold‐gallium phases, either directly through codeposition of alloy films or through annealing of pure gold films on substrates of gallium arsenide, and localized current or field concentrations due to nonplanar phase morphologies. General behavior of electrical properties is reported and interpreted in terms of the existing structure and phase morphology near the original alloy film/gallium arsenide interface.
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